The Time Is Right (cont.)
DRAM technology needs
new dielectric materials to allow adequate charge to be stored in the
small areas of future devices. Neither technology faces an abrupt cut-off
but unless some alternatives are developed, performance will fall steadily
behind the full roadmap potential and the trend of continuous reduction
in cost per bit will end. Newer memory technologies such as FeRAM and
MRAM face even greater materials issues than DRAM and the experience of
the semiconductor industry has been that such problems take longer than
expected to solve.
Against this background
of impending limits in conventional technology, the PMCm offers simplicity
of concept leading to efficient manufacturing and the applications flexibility
that will come from having one high-density memory cell that can be used
for both dynamic and non-volatile applications.